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Model: PC-JS03-Rotatable Triple-targets
| Category | Parameter | Value/Description |
|---|---|---|
| Chamber | Design | Vertical front-loading, stainless steel |
| Vacuum | Base Pressure | ≤5×10⁻⁵ Pa |
| Leak Rate | ≤5×10⁻⁷ Pa·L/s | |
| Power Supply | RF Power | 1 × 1000 W, 13.56 MHz (auto-matching) |
| DC Power | 2 × 1000 W | |
| Targets | Quantity & Size | 3 × 2-inch magnetron targets (HV compatible) |
| Substrate | Heating Range | Programmable up to 450°C |
| Rotation Speed | 5-30 RPM (planetary rotation) | |
| Gas Control | Mass Flow | 2 independent MKS controllers (Ar + reactive gas) |
Supports DC/RF sputtering for metals, semiconductors, and insulators. The triple-target design enables sequential multilayer deposition without vacuum breaks.
Programmable substrate heating up to 450°C with adjustable ramp rates and a 5-30 RPM rotation mechanism ensures superior film thickness uniformity.
Ideal for nanoscale functional films (optoelectronics, tribological coatings). Features reverse sputtering cleaning to enhance film adhesion and purity.
Includes manual controls for target shutters and rotation, complemented by water/power failure interlock protections.
A: The DC/RF sputtering system is compatible with a wide range of materials, including metals, semiconductors, and insulating thin films.
A: Yes, the rotatable triple-target design allows for the sequential deposition of up to three different materials without breaking the vacuum.
A: The system features a programmable substrate heater that can reach temperatures up to 450°C.
A: Uniformity is achieved through a controlled substrate rotation mechanism (5-30 RPM) and precise target-to-substrate distance adjustments.
A: The system is equipped with safety interlocks for water and power failure, as well as anti-misoperation protections to ensure safe laboratory operation.
A: The system uses a molecular pump and mechanical pump to reach a base pressure of ≤5×10⁻⁵ Pa with extremely low leak rates.
